P/N + 설명 + 콘텐츠 검색
Unisonic Technologies
상세내역 : 30A, 100V N-CHANNEL POWER MOSFET
Unisonic Technologies
상세내역 : 30A, 100V N-CHANNEL POWER MOSFET (Rev - 2012)
Unisonic Technologies
상세내역 : 30A, 100V N-CHANNEL POWER MOSFET (Rev - 2014)
부품명(s) : YJP30P10A
Yangzhou yangjie electronic co., Ltd
상세내역 : P-Channel Enhancement Mode Field Effect Transistor
부품명(s) : PA05 PA05A
Apex Microtechnology
상세내역 : POWER OPERATIONAL AMPLIFIERS (Rev - 1997)
부품명(s) : PA05 PA05A
Apex Microtechnology
상세내역 : POWER Operational Amplifier
부품명(s) : FME-230A
Sanken Electric co.,ltd.
상세내역 : 100V, 30A Schottky barrier diode in TO220F package
부품명(s) : YJG30P10A
Yangzhou yangjie electronic co., Ltd
상세내역 : P-Channel Enhancement Mode Field Effect Transistor
부품명(s) : TMBRF30100CT
First Silicon Co., Ltd
상세내역 : Dual Schottky Barrier Rectifiers
부품명(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
상세내역 : N-Channel POWER MOSFET (650V,12A)
부품명(s) : PA05 PA05A
Cirrus Logic
상세내역 : POWER Operational Amplifier
부품명(s) : PA05 PA05A
Apex Microtechnology
상세내역 : POWER Operational Amplifier (Rev - 2009)
부품명(s) : BLF8G27LS-100V BLF8G27LS-100GV
NXP Semiconductors.
상세내역 : POWER LDMOS transistor
부품명(s) : MBR30100CT
KEC
상세내역 : SCHOTTKY BARRIER TYPE DIODE
Yangzhou yangjie electronic co., Ltd
상세내역 : Schottky Rectifier
부품명(s) : STS4DNFS30L 4DFS30L
STMicroelectronics
상세내역 : N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier (Rev - 2011)
부품명(s) : IRF540
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
상세내역 : N-Channel MOSFET uses advanced trench technology
부품명(s) : MBRF30L100CT
KEC
상세내역 : SCHOTTKY BARRIER TYPE DIODE
부품명(s) : STD15NF10
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
상세내역 : N-Channel MOSFET uses advanced trench technology